? 2015 ixys corporation, all rights reserved xpt tm 600v igbt genx3 tm w/ diode IXXH30N60C3D1 v ces = 600v i c110 = 30a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.4v t fi(typ) = 32ns ds100333c(9/15) g = gate c = collector e = emitter tab = collector to-247 ad g c e tab extreme light punch through igbt for 20-60 khz switching features ? optimized for 20-60khz switching ? square rbsoa ? anti-parallel ultra fast diode ? avalanche capability ? short circuit capability ? international standard package advantages ? high power density ? 175c rated ? extremely rugged ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 600 v v ge(th) i c = 250 ? a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 100 ? a t j = 150 ? c 1 ma i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 24a, v ge = 15v, note 1 1.85 2.40 v t j = 150 ? c 2.30 v symbol test conditions maximum ratings v ces t j = 25c to 175c 600 v v cgr t j = 25c to 175c, r ge = 1m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 60 a i c110 t c = 110c 30 a i f110 t c = 110c 30 a i cm t c = 25c, 1ms 110 a i a t c = 25c 20 a e as t c = 25c 250 mj ssoa v ge = 15v, t vj = 150c, r g = 10 ? i cm = 48 a (rbsoa) clamped inductive load @v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 10 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 270 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in weight 6g
ixys reserves the right to change limits, test conditions, and dimensions. IXXH30N60C3D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . reverse diode (fred) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 30a, v ge = 0v, note 1 2.7 v t j = 150c 1.6 v i rm t j = 100c 4 a t rr t j = 100c 100 ns 25 ns r thjc 0.9 c/w i f = 30a, v ge = 0v, -di f /dt = 100a/ s, v r = 100v i f = 1a, v ge = 0v, -di f /dt = 100a/ s, v r = 30v symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 24a, v ce = 10v, note 1 8 14 s c ie s 1185 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 133 pf c res 25 pf q g(on) 37 nc q ge i c = 24a, v ge = 15v, v ce = 0.5 ? v ces 10 nc q gc 15 nc t d(on) 23 ns t ri 33 ns e on 0.50 mj t d(off) 77 125 ns t fi 32 ns e of f 0.27 0.45 mj t d(on) 22 ns t ri 35 ns e on 1.13 mj t d(off) 88 ns t fi 78 ns e off 0.40 mj r thjc 0.55 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 24a, v ge = 15v v ce = 400v, r g = 10 ? note 2 inductive load, t j = 150c i c = 24a, v ge = 15v v ce = 400v, r g = 10 ? note 2 1 - gate 2,4 - collector 3 - emitter to-247 (ixxh) outline
? 2015 ixys corporation, all rights reserved IXXH30N60C3D1 fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 48a t j = 25oc 24a 12a fig. 6. input admittance 0 10 20 30 40 50 456789101112 v ge - volts i c - amperes t j = 150oc 25oc - 40oc fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 50 00.511.522.533.5 v ce - volts i c - amperes v ge = 15v 14v 13v 10v 8v 6v 12v 9v 11v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 7v 9v 11v 13v 12v 14v 10v fig. 3. output characteristics @ t j = 150oc 0 5 10 15 20 25 30 35 40 45 50 0 0.5 1 1.5 2 2.5 3 3.5 4 v ce - volts i c - amperes v ge = 15v 14v 13v 12v 9v 11v 8v 10v 7v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 24a i c = 12a i c = 48a
ixys reserves the right to change limits, test conditions, and dimensions. IXXH30N60C3D1 fig. 7. transconductance 0 2 4 6 8 10 12 14 16 18 20 22 0 5 10 15 20 25 30 35 40 45 50 55 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 5 10 15 20 25 30 35 40 45 50 55 100 200 300 400 500 600 v ce - volts i c - amperes t j = 150oc r g = 10 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 q g - nanocoulombs v ge - volts v ce = 300v i c = 24a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res fig. 12. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 11. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms 10ms v ce(sat) limit 100s dc
? 2015 ixys corporation, all rights reserved IXXH30N60C3D1 fig. 13. inductive switching energy loss vs. gate resistance 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 10 20 30 40 50 60 70 80 r g - ohms e off - millijoules 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 24a i c = 48a fig. 16. inductive turn-off switching times vs. gate resistance 40 50 60 70 80 90 100 110 10 20 30 40 50 60 70 80 r g - ohms t f i - nanoseconds 60 90 120 150 180 210 240 270 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 24a i c = 48a fig. 14. inductive switching energy loss vs. collector current 0.1 0.2 0.3 0.4 0.5 0.6 0.7 12 16 20 24 28 32 36 40 44 48 i c - amperes e off - millijoules 0.0 0.4 0.8 1.2 1.6 2.0 2.4 e on - millijoules e off e on - - - - r g = 10 ? ????? v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 e on - millijoules e off e on - - - - r g = 10 ? ???? v ge = 15v v ce = 400v i c = 24a i c = 48a fig. 17. inductiv e turn-off switching times v s. collector current 0 20 40 60 80 100 120 140 10 15 20 25 30 35 40 45 50 i c - amperes t f i - nanoseconds 50 60 70 80 90 100 110 120 t d(off) - nanoseconds t f i t d(off) - - - - r g = 10 ? ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 18. inductive turn-off switching times vs. junction temperature 0 20 40 60 80 100 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 50 60 70 80 90 100 t d(off) - nanoseconds t f i t d(off) - - - - r g = 10 ? ? , v ge = 15v v ce = 400v i c = 24a i c = 48a
ixys reserves the right to change limits, test conditions, and dimensions. IXXH30N60C3D1 fig. 20. inductive turn-on switching times vs. collector current 10 20 30 40 50 60 70 80 10 15 20 25 30 35 40 45 50 i c - amperes t r i - nanoseconds 16 18 20 22 24 26 28 30 t d(on) - nanoseconds t r i t d(on) - - - - r g = 10 ? ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 21. inductive turn-on switching times vs. junction temperature 10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 20 21 22 23 24 25 26 27 28 29 t d(on) - nanoseconds t r i t d(on) - - - - r g = 10 ? ? , v ge = 15v v ce = 400v i c = 48a i c = 24a fig. 19. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 10 20 30 40 50 60 70 80 r g - ohms t r i - nanoseconds 10 20 30 40 50 60 70 80 90 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 48a i c = 24a
? 2015 ixys corporation, all rights reserved IXXH30N60C3D1 ixys ref: ixx_30n60c3d1(4d)05-06-11 200 600 1000 0 400 800 60 70 80 90 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 04080120160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.00 0.25 0.50 0.75 1.00 v fr di f /dt v 200 600 1000 0 400 800 0 5 10 15 20 25 30 100 1000 0 200 400 600 800 1000 0123 0 10 20 30 40 50 60 i rm q r i f a v f -di f /dt -di f /dt a/ ? s a v nc a/ ? s a/ ? s t rr ns t fr z thjc a/ ? s ? s dsep 29-06 t vj = 100c v r = 300v t vj = 100c i f = 30a q r i rm fig. 26. recovery time t rr versus -di f /dt fig. 28. peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 28. transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.502 0.0052 2 0.193 0.0003 3 0.205 0.0162 fig. 25. dynamic parameters q r , i rm versus t vj i f = 60a i f = 30a i f = 15a fig. 24. peak reverse current i rm versus -di f /dt fig. 23. reverse recovery charge q r versus -di f /dt fig. 22. forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f = 60a i f = 30a i f = 15a t vj = 25c t vj =100c t vj =150c
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